Home > Electrochemistry > Germaniu m as new electrode for electrochemical cells with solid hydroxide protonic conductors at room temperature interval

Germaniu m as new electrode for electrochemical cells with solid hydroxide protonic conductors at room temperature interval

February 22nd, 2013


 (-) Ge | KOHH2O | C(+)

Solid protonic conductors based on crystallohydrates of alkaline metals are studied from 2007. Our attention is concentrated  on KOH⋅nH2O (0,5≤ n ≤2). Meltng points are 100°C (n=0.5),  146°C (n=1), 42°C(n=2.0). These particular points of phase diagram KOH – H2O are interesting first of all for basic research, but intermediate ‘n’ have to be studied from applied viewpoint owimg to composite formation at low temperatures and high proton conductivity )more 1 mS/cm. However to use these compounds on elect traditional electrode material –graphite – and rochemical devices of any type it is necessary to find electrode materials compatible with solid hydroxide compounds.  On this site  metallic Pd, Ti, TiFe and Sn are already presented together with traditional electrode material –graphite.  As Carbon and  Tin are the memebers of IV group of periodical table  we are starting to study the classical semiconductors Si an Ge.

The electrochemical cell under study was formed in Teflon tube of 10 mm in diameter. Electrodes were plate p-Ge (28 Ohm.cm) and C(graphite rod). . The interelectrode distance was 1 cm.

The electrolyte was KOH⋅1.05 H2O (125°C<T crystallzation <147°C). Such mixture has been simplified the procedure of the formation of cell.

The resistance of electrolyte was 1.3 kOhm. According to impedance spectroscopy the resistance of whole cell was 5-7 kOhm at low current density (<0,1 mA/cm2).

The Open Curcuit Voltage of this cell was 0,72 V at 300 K and varied with tempature as 1 mV/K.

Cermanium was the negative electrode. 

Using Germanium  ans Carbon allows to consider the opportunity:                                         

  1. to combine with Solar Cells,
  2. to use as  low-drain power sources in  microelectronics.
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