V. N. Andreev, V.A. Klimov

February 18th, 2015

Effect of the Metal–Semiconductor Phase Transition on the Rate of Hydrogen Penetration into Vanadium Dioxide Thin Films

The rates of hydrogen penetration from an aqueous solution of glycerin into thin films of vana
dium dioxide in different phases have been compared. It has been found that the rate of hydrogen penetration
into the metal phase of vanadium dioxide is at least one order of magnitude higher than that of hydrogen pen
etration into the semiconductor phase at the same temperature.

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Influence of Hydrogenation on Electrical Conductivity of Vanadium Dioxide Thin Films

The influence of hydrogenation on electrical conductivity of vanadium dioxide thin films has been
investigated. It has been shown using measurements of the electrical conductivity that the hydrogenation of
vanadium dioxide thin films leads to a decrease in the temperature of the phase transition from the tetragonal
phase (with “metallic” conductivity) to the semiconducting monoclinic phase. It has been found that, upon
doping of vanadium dioxide with hydrogen, the electrical conductivity of the monoclinic phase can increase
by several orders of magnitude. Nonetheless, the temperature dependence of the electrical conductivity of
hydrogenated films exhibits a typical semiconducting behavior in the temperature range where the mono
clinic phase is stable.

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Effect of Hydrogenation on the Metal–Semiconductor Phase Transition in Vanadium Dioxide Thin Films

Hydrogen penetration into thin films of vanadium dioxide from aqueous solutions of mono-, di-,
and tribasic alcohols has been studied. It is shown that this process is reversible, is of a catalytic character, and brings about a lowering of the metal–semiconductor phase transition temperature. It has been established that
the phase transition in a hydrogenated HxVO2 film is completely suppressed for x>0.04.

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